3d custom girl evolution trap mod2/8/2024 ![]() Impurity charges adsorbed on the graphene surface during growth and post processing act as dopants and influence charge transport. Using an IL lowers the gate voltage needed for device operation due to its high specific capacitance. Nicholas J Pinto, Elvin Cordero Figueroa, Chengyu Wen, A T Charlie JohnsonĬharge transport in CVD graphene was investigated at room temperature using a field effect transistor platform with an ionic liquid (IL) as the gate material. G00.00005: Effect of the gate voltage scan rate on charge transport in graphene that is gated with an ionic liquid We also found that the surface roughness is easily tunable by annealing above 200° C, making them potentially useful for substrates utilizing surface enhanced techniques such as Raman spectroscopy. Our ultraflat gold films should be highly useful for any research requiring extremely smooth surfaces, such as the exploration of self-assembled monolayers. We found no evidence for granular structure even for AFM scans exceeding 100 square microns. It was especially interesting to see that the gold films were flatter than both the native oxide of the silicon wafer and the sputtered MoS 2 bilayers. For gold films with thicknesses between 10 to 15 nm, the surface roughness was consistently less than 100 pm, which is approximately the resolution of the atomic force microscope (AFM) used in these experiments. Gold films deposited on the sputtered MoS 2 bilayers had RMS surface roughness of less than 300 pm. Gold films deposited onto bare silicon wafer substrates had nanometer scale (or larger) RMS surface roughness. It was immediately apparent that the gold deposited onto the MoS 2/SiO 2/Si substrates were far superior. To explore integration with semiconductor devices and/or substrates for further growth, the used substrates were either standard silicon wafers with a native oxide (SiO 2/Si), or MoS 2 bilayers sputtered onto such silicon wafers (MoS 2/SiO 2/Si). We have determined that gold films with subatomic surface roughness can be prepared onto MoS 2 surfaces using a simple sputtering process at room temperature. Jeff Carlson, Andrew J Stollenwerk, Tim E Kidd G00.00004: Preparation of Gold Films on MoS 2 with Subatomic Surface Roughness by Sputtering We present a possible explanation for this relationship, wherein competing ferromagnetic metallic and insulating phases within the material lead to the temperature dependence of AMR in LCMO. We find that there is an overall inverse relationship between sample temperature and resistance anisotropy with the exception of one anomalous temperature at 100 K. Then, we investigate the dependence of AMR on temperature in a La 0.7Ca 0.3MnO 3 (LCMO) thin film and analyze it using a phenomenological model. We develop a convenient method for measuring the AMR of thin film samples using a home-built cryostat, which allows for large sample sizes, and a LabView program to collect data. AMR can reveal certain underlying phenomena in magnetic materials and is also relevant for potential applications. One lesser-explored property of manganites is anisotropic magnetoresistance (AMR), or electrical resistance that changes as a function of the angle between the manganite sample and an applied magnetic field. Manganite thin films have been extensively studied for their wide range of potential applications in solid-state data storage and correlated electron devices. G00.00003: Characterizing the Relationship Between Temperature and Anisotropic Magnetoresistance in Manganite Thin Films Motivated by the above results, we extend our studies toward achieving robust single and multiqubit operations in our 1D models. We further study the scope of quench dynamics of the entanglement spectrum as a signal to identify topological phase transitions in our models. ![]() We characterize the topological origin of these phases using winding numbers and entanglement entropy. We find that long-range hopping in dimerized chains leads to multiple zero-modes whereas previously observed long-range pairing in p-wave superconductors gives rise to localized non-zero edge modes with fractional winding numbers. We find that different regimes of long-range couplings yield non-trivial topological phases that inherit zero modes and massive edge modes. ![]() We theoretically explore 1D p-wave superconductors and dimerized chains in the presence of long-range couplings to achieve richer topological phases. G00.00002: Achieving robust topological phases and qubit operations in the presence of long-range interactions Session G00: Poster Session I (2pm-5pm PST) Poster Undergrad Friendly Virtual (March 20-22) Time Zone: Pacific Time ![]()
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